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Electrodeposition of CuNi10% Alloys for Stacked Integrated Circuits Applications

Ph D Defense
2022-06-30 10:00
KU Leuven, Thermotechnisch Instituut, Aula van de Tweede Hoofdwet, 01.02 - Kasteelpark Arenberg 41
3001 Leuven, België

Promovendus/a: Karel Haesevoets

Promotor(en): Prof. dr. Philippe Vereecken, Dr. Harold Philipsen

Electrodeposition is frequently used in fabrication of microelectronic components primarily due to its ability to fill high aspect ratio features with complex geometries at high deposition rates, leading to high throughput and lower manufacturing costs. For example, Copper (Cu) plating of interconnects in integrated circuits is the fabrication method of choice, where characteristic size of Cu lines can range from tens of nanometers to tens of microns, and aspect ratios could be as high as 25. However, there are numerous other applications requiring plating elements such as Sn, Ni, Co, Ag, or alloys such as Sn-Cu, Cu-Ni, Sn-Ag, Sn-Bi, etc.

In this project a thorough understanding of the CuNi alloy plating process for possible applications in 3D SIC (Three-dimensional stacked integrated circuits) and Energy Storage applications will be developed. Typical plating bath consists of the base electrolyte and possibly both inorganic and organic components, often referred to as additives, which have a critical role in fabrication of defect-free structures. The mechanism in which they interact with each other is often not completely understood, the consequence being that both extensive and expensive trial-and-error lab-bench and macroscopic (wafer-level) experiments need to be performed every time the given feature size and its aspect ratio change. Thorough understanding of the plating mechanism and its effect on the elemental composition (Cu:Ni 9:1) and morphology of the deposited structure would allow easier determination of deposition parameters and matching design requirements for a given material and application.

The main goal of this project is to accomplish galvanostatic deposition of a CuNi10% alloy with a smooth top surface roughness, inside photoresist patterns distributed over a whole wafer area.

Physical-chemical characterization techniques (SEM, EDX, XRD, XPS, etc.) will be used together with classical electrochemistry tools and techniques, such as rotating disc electrode (RDE) and cyclic voltammetry, providing information on the reaction mechanism in the relevant plating baths. Data obtained will be used to advance and support development of new 3D SIC and Energy Storage Applications.

All Dates

  • 2022-06-30 10:00

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